STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004

Nº de Estoque RS: 880-5355Marca: STMicroelectronicsPart Number: PD85004
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Maximum Operating Temperature

+150 °C

Height

0.44mm

Typical Power Gain

17 dB

Detalhes do produto

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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P.O.A.

Each (In a Pack of 5) (Sem VAT)

STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004
Selecione o tipo de embalagem

P.O.A.

Each (In a Pack of 5) (Sem VAT)

STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Maximum Operating Temperature

+150 °C

Height

0.44mm

Typical Power Gain

17 dB

Detalhes do produto

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more