STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

Nº de Estoque RS: 719-468Marca: STMicroelectronicsPart Number: SCT018W65G3AG
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Documentos Técnicos

Especificações

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

País de Origem

China

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Ver tudo em MOSFETs

Informações de estoque temporariamente indisponíveis.

R$ 272,60

R$ 272,60 Each (Sem VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

1

Disponível em múltiplos de 1
1R$ 272,60
2R$ 545,20
3R$ 817,80
4R$ 1.090,40
5R$ 1.342,00
6R$ 1.610,40
7R$ 1.878,80
8R$ 2.147,20
9R$ 2.415,60
10R$ 2.684,00
11R$ 2.952,40
12R$ 3.220,80
13R$ 3.489,20
14R$ 3.757,60
15R$ 4.026,00

R$ 272,60

R$ 272,60 Each (Sem VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

Informações de estoque temporariamente indisponíveis.

1

Disponível em múltiplos de 1
1R$ 272,60
2R$ 545,20
3R$ 817,80
4R$ 1.090,40
5R$ 1.342,00
6R$ 1.610,40
7R$ 1.878,80
8R$ 2.147,20
9R$ 2.415,60
10R$ 2.684,00
11R$ 2.952,40
12R$ 3.220,80
13R$ 3.489,20
14R$ 3.757,60
15R$ 4.026,00

QuantidadePreço unitário
1 - 4R$ 272,60
5+R$ 268,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

País de Origem

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more