Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
29mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
48.6nC
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Automotive Standard
AEC-Q101
País de Origem
China
Informações de estoque temporariamente indisponíveis.
R$ 317,48
R$ 317,48 Each (Sem VAT)
Padrão
1
R$ 317,48
R$ 317,48 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 317,48 |
| 10 - 99 | R$ 290,03 |
| 100+ | R$ 271,40 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
29mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
48.6nC
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Automotive Standard
AEC-Q101
País de Origem
China


