STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Nº de Estoque RS: 201-4415Marca: STMicroelectronicsPart Number: SCT20N120H
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Documentos Técnicos

Especificações

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

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Informações de estoque temporariamente indisponíveis.

R$ 263.830,00

R$ 263,83 Each (On a Reel of 1000) (Sem VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

1000

Disponível em múltiplos de 1000
1000R$ 263.830,00
2000R$ 527.660,00
3000R$ 791.490,00
4000R$ 1.055.320,00
5000R$ 1.319.150,00
6000R$ 1.582.980,00
7000R$ 1.846.810,00
8000R$ 2.110.640,00
9000R$ 2.374.470,00
10000R$ 2.638.300,00
11000R$ 2.902.130,00
12000R$ 3.165.960,00
13000R$ 3.429.790,00
14000R$ 3.693.620,00
15000R$ 3.957.450,00

R$ 263.830,00

R$ 263,83 Each (On a Reel of 1000) (Sem VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Informações de estoque temporariamente indisponíveis.

1000

Disponível em múltiplos de 1000
1000R$ 263.830,00
2000R$ 527.660,00
3000R$ 791.490,00
4000R$ 1.055.320,00
5000R$ 1.319.150,00
6000R$ 1.582.980,00
7000R$ 1.846.810,00
8000R$ 2.110.640,00
9000R$ 2.374.470,00
10000R$ 2.638.300,00
11000R$ 2.902.130,00
12000R$ 3.165.960,00
13000R$ 3.429.790,00
14000R$ 3.693.620,00
15000R$ 3.957.450,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more