SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG

Nº de Estoque RS: 202-5490Marca: STMicroelectronicsPart Number: SCTW40N120G2VAG
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Especificações

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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R$ 389,44

R$ 389,44 Each (Sem VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG
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R$ 389,44

R$ 389,44 Each (Sem VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more