Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 274,15
R$ 54,83 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 274,15
R$ 54,83 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
5
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 20 | R$ 54,83 | R$ 274,15 |
| 25 - 45 | R$ 52,90 | R$ 264,50 |
| 50 - 120 | R$ 48,31 | R$ 241,55 |
| 125 - 245 | R$ 44,15 | R$ 220,75 |
| 250+ | R$ 42,52 | R$ 212,60 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


