Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 153,00
R$ 76,50 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 153,00
R$ 76,50 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 8 | R$ 76,50 | R$ 153,00 |
| 10 - 24 | R$ 70,19 | R$ 140,38 |
| 26 - 98 | R$ 67,57 | R$ 135,14 |
| 100 - 498 | R$ 54,96 | R$ 109,92 |
| 500+ | R$ 49,32 | R$ 98,64 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


