STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2

Nº de Estoque RS: 111-6459Marca: STMicroelectronicsPart Number: STB18N60DM2
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

10.4 mm

Height

4.6mm

Length

9.35mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 254,40

R$ 50,88 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2
Selecione o tipo de embalagem

R$ 254,40

R$ 50,88 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

QuantidadePreço unitárioPer Pacote
5 - 5R$ 50,88R$ 254,40
10 - 95R$ 43,93R$ 219,65
100 - 495R$ 34,97R$ 174,85
500+R$ 29,96R$ 149,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

10.4 mm

Height

4.6mm

Length

9.35mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more