N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 39,82
Each (In a Pack of 5) (Sem VAT)
5
R$ 39,82
Each (In a Pack of 5) (Sem VAT)
5
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 20 | R$ 39,82 | R$ 199,10 |
| 25 - 45 | R$ 38,40 | R$ 192,00 |
| 50 - 120 | R$ 35,08 | R$ 175,40 |
| 125 - 245 | R$ 32,03 | R$ 160,15 |
| 250+ | R$ 30,91 | R$ 154,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products