Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.35mm
Length
10.4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
4.6mm
País de Origem
Malaysia
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
R$ 14.240,00
R$ 14,24 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 14.240,00
R$ 14,24 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.35mm
Length
10.4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
4.6mm
País de Origem
Malaysia
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


