Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Minimum Operating Temperature
-65 °C
Height
4.6mm
País de Origem
China
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
R$ 26.960,00
R$ 26,96 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 26.960,00
R$ 26,96 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Minimum Operating Temperature
-65 °C
Height
4.6mm
País de Origem
China
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


