Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
País de Origem
China
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 27.540,00
R$ 27,54 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 27.540,00
R$ 27,54 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
País de Origem
China
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


