N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STMicroelectronics STB80NF10T4

Nº de Estoque RS: 103-1566Marca: STMicroelectronicsPart Number: STB80NF10T4
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

135 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.6mm

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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R$ 27.760,00

R$ 27,76 Each (On a Reel of 1000) (Sem VAT)

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STMicroelectronics STB80NF10T4

R$ 27.760,00

R$ 27,76 Each (On a Reel of 1000) (Sem VAT)

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STMicroelectronics STB80NF10T4
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

135 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.6mm

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more