STMicroelectronics STripFET P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK STD10P6F6
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
7.45mm
Length
6.6mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.38mm
Forward Diode Voltage
1.1V
País de Origem
China
Detalhes do produto
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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R$ 25.850,00
R$ 10,34 Each (On a Reel of 2500) (Sem VAT)
2500
R$ 25.850,00
R$ 10,34 Each (On a Reel of 2500) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
2500
Informações de estoque temporariamente indisponíveis.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
7.45mm
Length
6.6mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.38mm
Forward Diode Voltage
1.1V
País de Origem
China
Detalhes do produto
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products