N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2

Nº de Estoque RS: 165-5377Marca: STMicroelectronicsPart Number: STD13N65M2
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

430 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

2.4mm

Forward Diode Voltage

1.6V

País de Origem

China

Detalhes do produto

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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R$ 49.775,00

R$ 19,91 Each (On a Reel of 2500) (Sem VAT)

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2

R$ 49.775,00

R$ 19,91 Each (On a Reel of 2500) (Sem VAT)

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

430 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

2.4mm

Forward Diode Voltage

1.6V

País de Origem

China

Detalhes do produto

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more