STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 3-Pin DPAK STD18N65M5

Nº de Estoque RS: 783-3030PMarca: STMicroelectronicsPart Number: STD18N65M5
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Especificações

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

220 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.4mm

País de Origem

China

Detalhes do produto

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

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STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 3-Pin DPAK STD18N65M5
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Each (Supplied on a Reel) (Sem VAT)

STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 3-Pin DPAK STD18N65M5
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

220 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.4mm

País de Origem

China

Detalhes do produto

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more