STMicroelectronics STripFET N-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK STD35NF06T4

Nº de Estoque RS: 760-9893Marca: STMicroelectronicsPart Number: STD35NF06T4
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Especificações

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

44.5 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 135,80

R$ 27,16 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics STripFET N-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK STD35NF06T4
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R$ 135,80

R$ 27,16 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics STripFET N-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK STD35NF06T4

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

44.5 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more