STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 900 V, 3-Pin DPAK STD3NK90ZT4

Nº de Estoque RS: 687-5099PMarca: STMicroelectronicsPart Number: STD3NK90ZT4
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

22.7 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+150 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 900 V, 3-Pin DPAK STD3NK90ZT4
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 900 V, 3-Pin DPAK STD3NK90ZT4

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

22.7 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+150 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more