STMicroelectronics STripFET H7 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-252

Nº de Estoque RS: 168-7058Marca: STMicroelectronicsPart Number: STD45N10F7
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

STripFET H7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

País de Origem

China

Detalhes do produto

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ver tudo em MOSFETs

Informações de estoque temporariamente indisponíveis.

R$ 43.300,00

R$ 17,32 Each (On a Reel of 2500) (Sem VAT)

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-252

R$ 43.300,00

R$ 17,32 Each (On a Reel of 2500) (Sem VAT)

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-252

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

STripFET H7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

País de Origem

China

Detalhes do produto

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more