STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252

Nº de Estoque RS: 920-8802Marca: STMicroelectronicsPart Number: STD60NF06T4
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Series

STripFET II

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

49nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Width

6.2 mm

Automotive Standard

No

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 34.375,00

R$ 13,75 Each (On a Reel of 2500) (Sem VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252

R$ 34.375,00

R$ 13,75 Each (On a Reel of 2500) (Sem VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Series

STripFET II

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

49nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Width

6.2 mm

Automotive Standard

No

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more