Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-252
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 177,60
R$ 17,76 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 177,60
R$ 17,76 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 40 | R$ 17,76 | R$ 177,60 |
| 50 - 90 | R$ 17,10 | R$ 171,00 |
| 100 - 240 | R$ 15,79 | R$ 157,90 |
| 250 - 490 | R$ 15,60 | R$ 156,00 |
| 500+ | R$ 15,47 | R$ 154,70 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-252
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


