STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Nº de Estoque RS: 103-1568Marca: STMicroelectronicsPart Number: STE40NC60
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

307.5nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Height

9.1mm

Length

38.2mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ver tudo em MOSFETs

Informações de estoque temporariamente indisponíveis.

R$ 5.503,00

R$ 550,30 Each (In a Tube of 10) (Sem VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

R$ 5.503,00

R$ 550,30 Each (In a Tube of 10) (Sem VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
10 - 40R$ 550,30R$ 5.503,00
50 - 90R$ 533,63R$ 5.336,30
100 - 190R$ 477,60R$ 4.776,00
200 - 490R$ 452,46R$ 4.524,60
500+R$ 426,43R$ 4.264,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

307.5nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Height

9.1mm

Length

38.2mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more