N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220FP STMicroelectronics STFH18N60M2

Nº de Estoque RS: 178-1406Marca: STMicroelectronicsPart Number: STFH18N60M2
brand-logo
View all in MOSFETs

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

11.1mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Number of Elements per Chip

1

Width

4.8mm

Forward Diode Voltage

1.6V

Height

16.2mm

Series

MDmesh M2

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Informações de estoque temporariamente indisponíveis.

P.O.A.

N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220FP STMicroelectronics STFH18N60M2

P.O.A.

N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220FP STMicroelectronics STFH18N60M2
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

11.1mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Number of Elements per Chip

1

Width

4.8mm

Forward Diode Voltage

1.6V

Height

16.2mm

Series

MDmesh M2

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics