STMicroelectronics STGB10NC60HDT4, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
9.35 mm
Length
10.4mm
Height
4.6mm
Standards/Approvals
RoHS
Automotive Standard
No
Detalhes do produto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informações de estoque temporariamente indisponíveis.
R$ 183,40
R$ 36,68 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 183,40
R$ 36,68 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
5
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 20 | R$ 36,68 | R$ 183,40 |
| 25 - 45 | R$ 35,41 | R$ 177,05 |
| 50 - 120 | R$ 32,35 | R$ 161,75 |
| 125 - 245 | R$ 29,44 | R$ 147,20 |
| 250+ | R$ 28,46 | R$ 142,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
9.35 mm
Length
10.4mm
Height
4.6mm
Standards/Approvals
RoHS
Automotive Standard
No
Detalhes do produto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products