Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
855pF
Maximum Operating Temperature
+175 °C
Energy Rating
221mJ
País de Origem
China
Detalhes do produto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 14,11
Each (In a Pack of 10) (Sem VAT)
10
R$ 14,11
Each (In a Pack of 10) (Sem VAT)
10
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 40 | R$ 14,11 | R$ 141,10 |
50 - 90 | R$ 13,60 | R$ 136,00 |
100 - 240 | R$ 12,42 | R$ 124,20 |
250 - 490 | R$ 11,39 | R$ 113,90 |
500+ | R$ 10,98 | R$ 109,80 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
855pF
Maximum Operating Temperature
+175 °C
Energy Rating
221mJ
País de Origem
China
Detalhes do produto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.