STMicroelectronics STGF10NB60SD IGBT, 23 A 600 V, 3-Pin TO-220FP, Through Hole
Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current
23 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
25 W
Package Type
TO-220FP
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 20mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
610pF
Maximum Operating Temperature
+150 °C
Energy Rating
8mJ
País de Origem
China
Detalhes do produto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informações de estoque temporariamente indisponíveis.
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
10
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Tubo)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current
23 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
25 W
Package Type
TO-220FP
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 20mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
610pF
Maximum Operating Temperature
+150 °C
Energy Rating
8mJ
País de Origem
China
Detalhes do produto
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products