Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Width
5.15mm
Series
SMPS
Automotive Standard
No
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informações de estoque temporariamente indisponíveis.
R$ 64,31
R$ 64,31 Each (Sem VAT)
Padrão
1
R$ 64,31
R$ 64,31 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 64,31 |
| 10 - 99 | R$ 36,08 |
| 100 - 599 | R$ 29,88 |
| 600+ | R$ 27,37 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Width
5.15mm
Series
SMPS
Automotive Standard
No
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
