STMicroelectronics STGW80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole

Nº de Estoque RS: 792-5814Marca: STMicroelectronicsPart Number: STGW80H65DFB
brand-logo
Ver tudo em IGBTs

Documentos Técnicos

Especificações

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Series

H

Automotive Standard

No

Detalhes do produto

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Ver tudo em IGBTs

Informações de estoque temporariamente indisponíveis.

R$ 110,95

R$ 110,95 Each (Sem VAT)

STMicroelectronics STGW80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 1.

Produção -

Disponível em múltiplos de 1.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

1

Disponível em múltiplos de 1
1R$ 110,95
2R$ 221,90
3R$ 332,85
4R$ 443,80
5R$ 554,75
6R$ 665,70
7R$ 776,65
8R$ 887,60
9R$ 998,55
10R$ 1.109,50
11R$ 1.220,45
12R$ 1.331,40
13R$ 1.442,35
14R$ 1.553,30
15R$ 1.664,25

R$ 110,95

R$ 110,95 Each (Sem VAT)

STMicroelectronics STGW80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 1.

Produção -

Disponível em múltiplos de 1.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

1

Disponível em múltiplos de 1
1R$ 110,95
2R$ 221,90
3R$ 332,85
4R$ 443,80
5R$ 554,75
6R$ 665,70
7R$ 776,65
8R$ 887,60
9R$ 998,55
10R$ 1.109,50
11R$ 1.220,45
12R$ 1.331,40
13R$ 1.442,35
14R$ 1.553,30
15R$ 1.664,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Series

H

Automotive Standard

No

Detalhes do produto

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more