STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
10.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Informações de estoque temporariamente indisponíveis.
R$ 134,88
R$ 67,44 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 134,88
R$ 67,44 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 8 | R$ 67,44 | R$ 134,88 |
| 10 - 18 | R$ 65,04 | R$ 130,08 |
| 20 - 48 | R$ 59,51 | R$ 119,02 |
| 50 - 98 | R$ 54,34 | R$ 108,68 |
| 100+ | R$ 52,51 | R$ 105,02 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
10.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products