Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
10.57 mm
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 47.600,00
R$ 47,60 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 47.600,00
R$ 47,60 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
10.57 mm
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


