Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 85.190,00
R$ 85,19 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 85.190,00
R$ 85,19 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


