N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2

Nº de Estoque RS: 792-5861Marca: STMicroelectronicsPart Number: STH3N150-2
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Width

15.8mm

Transistor Material

Si

Height

4.8mm

Detalhes do produto

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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R$ 97,88

Each (In a Pack of 2) (Sem VAT)

N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2
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R$ 97,88

Each (In a Pack of 2) (Sem VAT)

N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
2 - 8R$ 97,88R$ 195,76
10 - 18R$ 93,34R$ 186,68
20 - 48R$ 89,77R$ 179,54
50 - 98R$ 85,96R$ 171,92
100+R$ 83,10R$ 166,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Width

15.8mm

Transistor Material

Si

Height

4.8mm

Detalhes do produto

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more