Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Detalhes do produto
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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R$ 97,88
Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 97,88
Each (In a Pack of 2) (Sem VAT)
Padrão
2
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
2 - 8 | R$ 97,88 | R$ 195,76 |
10 - 18 | R$ 93,34 | R$ 186,68 |
20 - 48 | R$ 89,77 | R$ 179,54 |
50 - 98 | R$ 85,96 | R$ 171,92 |
100+ | R$ 83,10 | R$ 166,20 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Detalhes do produto