STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6

Nº de Estoque RS: 192-4825Marca: STMicroelectronicsPart Number: STL10N60M6
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Especificações

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

5mm

Length

6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

0.95mm

País de Origem

China

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Informações de estoque temporariamente indisponíveis.

R$ 223,20

R$ 44,64 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
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R$ 223,20

R$ 44,64 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 20R$ 44,64R$ 223,20
25 - 45R$ 42,60R$ 213,00
50 - 120R$ 41,02R$ 205,10
125 - 245R$ 39,30R$ 196,50
250+R$ 37,88R$ 189,40

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

5mm

Length

6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

0.95mm

País de Origem

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more