Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 173,75
R$ 34,75 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 173,75
R$ 34,75 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
5
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 5 | R$ 34,75 | R$ 173,75 |
| 10+ | R$ 33,50 | R$ 167,50 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


