Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
57W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
6.35 mm
Height
1mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 97,06
R$ 48,53 Each (Supplied as a Tape) (Sem VAT)
Padrão
2
R$ 97,06
R$ 48,53 Each (Supplied as a Tape) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
57W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
6.35 mm
Height
1mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


