Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
R$ 168,60
R$ 16,86 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 168,60
R$ 16,86 Each (In a Pack of 10) (Sem VAT)
Padrão
10
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 20 | R$ 16,86 | R$ 168,60 |
30 - 90 | R$ 16,20 | R$ 162,00 |
100 - 490 | R$ 12,40 | R$ 124,00 |
500 - 990 | R$ 10,64 | R$ 106,40 |
1000+ | R$ 8,66 | R$ 86,60 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto