Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
STripFET F7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
9.15mm
País de Origem
China
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
R$ 1.136,00
R$ 22,72 Each (In a Tube of 50) (Sem VAT)
50
R$ 1.136,00
R$ 22,72 Each (In a Tube of 50) (Sem VAT)
50
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Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
STripFET F7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
9.15mm
País de Origem
China
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.