STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220

Nº de Estoque RS: 920-8723Marca: STMicroelectronicsPart Number: STP10NK60ZFP
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Height

9.3mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ver tudo em MOSFETs

Informações de estoque temporariamente indisponíveis.

R$ 1.614,00

R$ 32,28 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220

R$ 1.614,00

R$ 32,28 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
50 - 50R$ 32,28R$ 1.614,00
100 - 450R$ 25,49R$ 1.274,50
500 - 950R$ 21,98R$ 1.099,00
1000 - 4950R$ 18,58R$ 929,00
5000+R$ 17,84R$ 892,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Height

9.3mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more