Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 1.725,50
R$ 34,51 Each (In a Tube of 50) (Sem VAT)
50
R$ 1.725,50
R$ 34,51 Each (In a Tube of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
50
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 50 - 50 | R$ 34,51 | R$ 1.725,50 |
| 100 - 450 | R$ 28,14 | R$ 1.407,00 |
| 500 - 950 | R$ 25,27 | R$ 1.263,50 |
| 1000 - 4950 | R$ 21,68 | R$ 1.084,00 |
| 5000+ | R$ 21,17 | R$ 1.058,50 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalhes do produto


