STMicroelectronics Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 STP13NK60Z

Nº de Estoque RS: 485-7490Marca: STMicroelectronicsPart Number: STP13NK60Z
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

550mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

66nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

4.6 mm

Length

10.4mm

Height

9.15mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 154,25

R$ 30,85 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 STP13NK60Z
Selecione o tipo de embalagem

R$ 154,25

R$ 30,85 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 STP13NK60Z

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

QuantidadePreço unitárioPer Pacote
5 - 5R$ 30,85R$ 154,25
10 - 95R$ 26,80R$ 134,00
100 - 495R$ 21,08R$ 105,40
500 - 995R$ 18,14R$ 90,70
1000+R$ 16,24R$ 81,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

550mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

66nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

4.6 mm

Length

10.4mm

Height

9.15mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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