Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
DeepGate, STripFET
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 131,66
R$ 65,83 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 131,66
R$ 65,83 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 8 | R$ 65,83 | R$ 131,66 |
| 10 - 18 | R$ 64,68 | R$ 129,36 |
| 20 - 48 | R$ 64,03 | R$ 128,06 |
| 50 - 98 | R$ 63,24 | R$ 126,48 |
| 100+ | R$ 62,48 | R$ 124,96 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
DeepGate, STripFET
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


