STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 STP24NM60N

Nº de Estoque RS: 168-7468Marca: STMicroelectronicsPart Number: STP24NM60N
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

15.75mm

Detalhes do produto

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 1.343,00

R$ 26,86 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 STP24NM60N

R$ 1.343,00

R$ 26,86 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 STP24NM60N

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
50 - 50R$ 26,86R$ 1.343,00
100 - 200R$ 21,28R$ 1.064,00
250+R$ 19,45R$ 972,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

15.75mm

Detalhes do produto

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more