Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET H7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
R$ 153,50
R$ 76,75 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 153,50
R$ 76,75 Each (In a Pack of 2) (Sem VAT)
Padrão
2
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
2 - 8 | R$ 76,75 | R$ 153,50 |
10 - 98 | R$ 66,50 | R$ 133,00 |
100 - 498 | R$ 59,51 | R$ 119,02 |
500+ | R$ 58,86 | R$ 117,72 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET H7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.