Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
79mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 157,28
R$ 157,28 Each (Sem VAT)
Padrão
1
R$ 157,28
R$ 157,28 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 4 | R$ 157,28 |
| 5 - 9 | R$ 151,75 |
| 10 - 24 | R$ 138,66 |
| 25 - 49 | R$ 135,85 |
| 50+ | R$ 134,22 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
79mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


