STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220 STP60NF06L

Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 176,90
R$ 35,38 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 176,90
R$ 35,38 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
5
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 5 | R$ 35,38 | R$ 176,90 |
| 10 - 20 | R$ 30,48 | R$ 152,40 |
| 25 - 95 | R$ 30,04 | R$ 150,20 |
| 100 - 495 | R$ 24,78 | R$ 123,90 |
| 500+ | R$ 21,08 | R$ 105,40 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

