STMicroelectronics STripFET N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

Nº de Estoque RS: 168-7519Marca: STMicroelectronicsPart Number: STP80NF12
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

120 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

15.75mm

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 1.315,00

R$ 26,30 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics STripFET N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

R$ 1.315,00

R$ 26,30 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics STripFET N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
50 - 50R$ 26,30R$ 1.315,00
100+R$ 25,38R$ 1.269,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

120 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

15.75mm

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more