STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247

Nº de Estoque RS: 103-1991Marca: STMicroelectronicsPart Number: STW26NM60N
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

±25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

60nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 1.875,90

R$ 62,53 Each (In a Tube of 30) (Sem VAT)

STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247

R$ 1.875,90

R$ 62,53 Each (In a Tube of 30) (Sem VAT)

STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
30 - 60R$ 62,53R$ 1.875,90
90 - 480R$ 50,80R$ 1.524,00
510 - 960R$ 45,84R$ 1.375,20
990+R$ 39,38R$ 1.181,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

±25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

60nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more