Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
39nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 1.825,20
R$ 60,84 Each (In a Tube of 30) (Sem VAT)
30
R$ 1.825,20
R$ 60,84 Each (In a Tube of 30) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
30
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 30 - 30 | R$ 60,84 | R$ 1.825,20 |
| 60 - 120 | R$ 49,46 | R$ 1.483,80 |
| 150+ | R$ 45,16 | R$ 1.354,80 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
39nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.


