Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
71nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
R$ 3.525,60
R$ 117,52 Each (In a Tube of 30) (Sem VAT)
30
R$ 3.525,60
R$ 117,52 Each (In a Tube of 30) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
30
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
71nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


