N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5

Nº de Estoque RS: 162-8526Marca: Texas InstrumentsPart Number: CSD16321Q5
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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R$ 19,21

Each (On a Reel of 2500) (Sem VAT)

N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5

R$ 19,21

Each (On a Reel of 2500) (Sem VAT)

N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more